Emission-Line Broadening of Current Tunable InAsSbP/InAsSb/InAsSbP Heterostructure Lasers
Identifieur interne : 000A33 ( Russie/Analysis ); précédent : 000A32; suivant : 000A34Emission-Line Broadening of Current Tunable InAsSbP/InAsSb/InAsSbP Heterostructure Lasers
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Abstract
The dependence of emission-line broadening on the drive current was studied at 50-80 K for tunable InAsSbP/InAsSb/InAsSbP double heterostructure lasers operating in the 3.3-3.4 μm spectral region. For a small increase of the injection current I over the threshold current Ith, the line width depends on the I - Ith difference hyperbolically, in accordance with the Schawlow-Townes and Henry theories that assume a homogeneous distribution of the nonequilibrium carrier concentration across the resonator width. With the current raised to (3-4)Ith, line narrowing ceases and the line starts to broaden with increasing current. The observed line broadening is explained by the effect of the nonequilibrium carrier concentration gradient between the middle of the resonator and its edges. In tunable lasers, this gradient increases with current, the lasing wavelength simultaneously decreasing. The minimal width of the lasing line is 10-20 MHz. © 2000 MAIK Nauka / Interperiodica .
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Heyrovsky Institute of Physical Chemistry, CAS, 18223 Prague 8</wicri:regionArea><wicri:noRegion>18223 Prague 8</wicri:noRegion></affiliation></author><author><name sortKey="Civish, S" uniqKey="Civish S">S. Civish</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>J. Heyrovsky Institute of Physical Chemistry, CAS, 18223 Prague 8, Czech Republic</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">République tchèque</country><wicri:regionArea>J. Heyrovsky Institute of Physical Chemistry, CAS, 18223 Prague 8</wicri:regionArea><wicri:noRegion>18223 Prague 8</wicri:noRegion></affiliation></author><author><name sortKey="Yakovlev, Yu P" uniqKey="Yakovlev Y">Yu. P. Yakovlev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021 Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg</wicri:regionArea><wicri:noRegion>Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021 Russia</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0516235</idno><date when="2000-12">2000-12</date><idno type="stanalyst">PASCAL 00-0516235 AIP</idno><idno type="RBID">Pascal:00-0516235</idno><idno type="wicri:Area/Main/Corpus">012155</idno><idno type="wicri:Area/Main/Repository">011A48</idno><idno type="wicri:Area/Russie/Extraction">000A33</idno></publicationStmt><seriesStmt><idno type="ISSN">1063-7826</idno><title level="j" type="abbreviated">Semiconductors</title><title level="j" type="main">Semiconductors</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Antimony compounds</term><term>Arsenic compounds</term><term>Experimental study</term><term>Indium compounds</term><term>Laser tuning</term><term>Line broadening</term><term>Phosphorus compounds</term><term>Semiconductor heterojunctions</term><term>Semiconductor lasers</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4255P</term><term>7866F</term><term>Etude expérimentale</term><term>Laser semiconducteur</term><term>Hétérojonction semiconducteur</term><term>Indium composé</term><term>Arsenic composé</term><term>Antimoine composé</term><term>Phosphore composé</term><term>Accord fréquence laser</term><term>Elargissement raie</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The dependence of emission-line broadening on the drive current was studied at 50-80 K for tunable InAsSbP/InAsSb/InAsSbP double heterostructure lasers operating in the 3.3-3.4 μm spectral region. For a small increase of the injection current I over the threshold current I<sub>th</sub>, the line width depends on the I - I<sub>th</sub> difference hyperbolically, in accordance with the Schawlow-Townes and Henry theories that assume a homogeneous distribution of the nonequilibrium carrier concentration across the resonator width. With the current raised to (3-4)I<sub>th</sub>, line narrowing ceases and the line starts to broaden with increasing current. The observed line broadening is explained by the effect of the nonequilibrium carrier concentration gradient between the middle of the resonator and its edges. In tunable lasers, this gradient increases with current, the lasing wavelength simultaneously decreasing. The minimal width of the lasing line is 10-20 MHz. © 2000 MAIK Nauka / Interperiodica .</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1063-7826</s0></fA01><fA02 i1="01"><s0>SMICES</s0></fA02><fA03 i2="1"><s0>Semiconductors</s0></fA03><fA05><s2>34</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Emission-Line Broadening of Current Tunable InAsSbP/InAsSb/InAsSbP Heterostructure Lasers</s1></fA08><fA11 i1="01" i2="1"><s1>IMENKOV (A. N.)</s1></fA11><fA11 i1="02" i2="1"><s1>KOLCHANOVA (N. M.)</s1></fA11><fA11 i1="03" i2="1"><s1>KUBAT (P.)</s1></fA11><fA11 i1="04" i2="1"><s1>CIVISH (S.)</s1></fA11><fA11 i1="05" i2="1"><s1>YAKOVLEV (Yu. P.)</s1></fA11><fA14 i1="01"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021 Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>J. 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